NTE2377 - NTE
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Transistors MOSFET - Power TO3P MOSFET - Power semiconductor transistor, package:TO3P. Drain to source breakdown, 900 volts minimum, gate to source breakdown +/- 30 volts maximum. Continuous drain current, 8 amps. Described as N-Ch, enhancement hi speed switch. td(off) = 350ns, td(o
This item can only be shipped to destinations within the USA.